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| DCR1020SF DCR1020SF Phase Control Thyristor Advance Information Replaces January 2000 version, DS4245-4.0 DS4245-5.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VDRM 6500V IT(AV) 640A ITSM 10700A dVdt 1000V/s dI/dt 100A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V Conditions DCR1020SF65 6500 DCR1020SF64 6400 DCR1020SF63 6300 DCR1020SF62 6200 DCR1020SF61 6100 DCR1020SF60 6000 Lower voltage grades available. Tvj = 0 to 125C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1020SF63 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/10 www.dynexsemi.com DCR1020SF CURRENT RATINGS Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 640 1005 967 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 473 742 682 A A A CURRENT RATINGS Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 515 809 765 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 377 592 530 A A A 2/10 www.dynexsemi.com DCR1020SF SURGE RATINGS Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 8.5 0.36 x 106 10.7 0.562 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 125 125 22.0 o Min. dc Anode dc - Max. 0.022 0.038 0.052 0.004 0.008 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/10 www.dynexsemi.com DCR1020SF DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 1800A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 1000A Gate source 30V, 15 tr 0.5s. Tj = 125oC. At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 Rise time 0.5s, Tj = 25oC Repetitive 50Hz Non-repetitive Typ. 0.5 Max. 3.6 150 1000 30 100 1.2 1.92 1.5 Units V mA V/s A/s A/s V m s dI/dt Rate of rise of on-state current VT(TO) rT tgd Threshold voltage On-state slope resistance Delay time IT = 1000A, tp = 1ms, Tj = 125C, tq Turn-off time VRM = 100V, dIRR/dt = 10A/s, VDR = 67% VDRM, dVDR/dt = 25V/s Tj = 25oC, VD = 10V Tj = 25oC 600 - s IL IH Latching current Holding current - 600 200 mA mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PG(M) PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See Gate Characteristics curve/table Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Typ. Max. 3.0 300 0.25 30 0.25 5 10 150 5 Units V mA V V V V A W W 4/10 www.dynexsemi.com DCR1020SF CURVES 2000 Tj = 125C 1800 800 Tj = 125C 700 1600 600 Instantaneous on-state current, IT - (A) 1400 1200 1000 800 600 400 200 0 1 Instantaneous on-state current, IT - (A) 2 3 4 5 Instantaneous on-state voltage, VT - (V) 6 500 400 300 200 100 0 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 3.0 Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where Fig.3 Maximum (limit) on-state characteristics A = 0.25863 B = 0.322589 C = 0.002564 D = -0.061059 these values are valid for Tj = 125C for IT 100A to 2000A 5/10 www.dynexsemi.com DCR1020SF 2500 800 700 2000 600 Power loss - (W) 1500 Power loss - (W) 500 400 1000 Conduction angle 180 120 90 60 30 15 100 200 300 400 500 600 Mean on-state current, IT(AV) - (A) 700 300 Conduction angle 180 120 90 60 30 15 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 350 200 500 100 0 0 0 0 Fig.4 Sine wave power dissipation curves Fig.5 Sine wave power dissipation curves 2500 800 700 2000 600 Power loss - (W) 1500 Power loss - (W) 500 400 1000 Conduction angle D.C. 180 120 90 60 30 0 200 400 600 800 Mean on-state current, IT(AV) - (A) 1000 300 Conduction angle D.C. 180 120 90 60 30 100 200 300 400 Mean on-state current, IT(AV) - (A) 500 200 500 100 0 0 0 Fig.6 Square wave power dissipation curves 6/10 Fig.7 Square wave power dissipation curves www.dynexsemi.com DCR1020SF 10 9 8 Upper limit Lower limit Gate trigger voltage, VGT - (V) 7 6 5 4 3 Tj = 125C 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) Fig.8 Gate characteristics 0.7 0.8 0.9 1.0 Tj = 25C Tj = -40C Table gives pulse power PGM in Watts Pulse Width s 100 200 500 1000 10000 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 400 150 125 100 25 - Preferred gate drive area 25 Upper Limit Lower Limit 5W 10W 20W 50W 100W 20 Gate trigger voltage, VGT - (V) 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) Fig.9 Gate characteristics 7 8 9 10 7/10 www.dynexsemi.com DCR1020SF 10000 Peak reverse recovery current, IRR - (A) Total stored charge, QRA3 - (C) Conditions: Tj = 125C IT = 550A VR = 100V 1000 Conditions: Tj = 125C IT = 550A VR = 100V Max Max Min 1000 Min 100 IT QRA3 25% IRR IRR 100 dI/dt 100 0.1 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) 10 0.1 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) Fig.11 Reverse recovery current 100 Fig.10 Stored charge 25 I2t = I2 x t 2 0.1 Thermal Impedance - junction to case - (C/W) Peak half sine wave on-state current - (kA) 20 0.4 Anode side cooled 15 0.3 Double side cooled 0.01 I2t value - (A2s x 106) I2t 10 0.2 Conduction 5 0.1 Effective thermal resistance Junction to case C/W Double side 0.022 0.024 0.026 0.027 Anode side 0.038 0.040 0.042 0.043 0 1 ms 10 1 2 3 45 10 0 20 30 50 d.c. Halfwave 3 phase 120 6 phase 60 0.001 0.001 0.01 Cycles at 50Hz Duration 0.1 Time - (s) 1.0 10 Fig.12 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125C) Fig.13 Transient thermal impedance - junction to case 8/10 www.dynexsemi.com DCR1020SF PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6x2.0 deep (in both electrodes) Cathode tab Cathode O76 max O48 nom O1.5 Gate O48 nom Anode Nominal weight: 450g Clamping force: 19.5kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F 27.0 25.4 9/10 www.dynexsemi.com DCR1020SF POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4245-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com |
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